Paper
1 December 1991 Dislocation mechanism of periodical relief formation in laser-irradiated silicon
Galina D. Shandybina
Author Affiliations +
Proceedings Volume 1440, Optical Radiation Interaction with Matter; (1991) https://doi.org/10.1117/12.48174
Event: Optical Radiation Interaction with Matter, 1990, Leningrad, Russian Federation
Abstract
The dynamics of surface relief changes and thermal deformation in semiconductors are investigated with respect to radiation power density during laser pulses. A thermomechanical model of periodical relief formation is suggested.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Galina D. Shandybina "Dislocation mechanism of periodical relief formation in laser-irradiated silicon", Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); https://doi.org/10.1117/12.48174
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KEYWORDS
Silicon

Semiconductor lasers

Crystals

Semiconductors

Pulsed laser operation

Laser irradiation

Laser crystals

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