Paper
1 July 1991 High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well lasers for pumping Er-doped fiber amplifiers
Anders G. Larsson, Siamak Forouhar, Jeffrey G. Cody, Robert J. Lang, Peter A. Andrekson
Author Affiliations +
Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43813
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
A 980 nm ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single quantum well laser with a maximum single-ended output power of 240 mW from a facet coated device has been fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22% coupling efficiency into a 1.55 micrometers single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anders G. Larsson, Siamak Forouhar, Jeffrey G. Cody, Robert J. Lang, and Peter A. Andrekson "High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well lasers for pumping Er-doped fiber amplifiers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43813
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KEYWORDS
Fiber amplifiers

Fiber lasers

Semiconductor lasers

Laser applications

Reliability

Quantum efficiency

Quantum wells

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