Photoemission under three-photon excitation in a NEA GaAs photocathode

Liming Wang; Xun Hou; Zhao Cheng

doi:10.1117/12.43682

1 May 1991 Photoemission under three-photon excitation in a NEA GaAs photocathode

Liming Wang, Xun Hou, Zhao Cheng

Proceedings Volume 1415, Modeling and Simulation of Laser Systems II; (1991) https://doi.org/10.1117/12.43682
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

This paper reports the measurement of electron emission due to 2.06 micrometers Q-switched laser excitation on Cs, O2 activated GaAs photocathodes with different sensitivity. The cubic dependence on fluence is consistent with three-photon excitation across the bandgap of GaAs semiconductor. The same cubic response in photoelectron emission at liquid nitrogen temperature (77K) demonstrates that the electron emission is three-photon photoemission and thermal emission is negligible. The characteristics of multiphoton photoemission is strongly determined by the sensitivity of photocathode. A formula based on three-order perturbation theory accounts quantitatively for the authors' observation.

Citation Download Citation

Liming Wang, Xun Hou, and Zhao Cheng "Photoemission under three-photon excitation in a NEA GaAs photocathode", Proc. SPIE 1415, Modeling and Simulation of Laser Systems II, (1 May 1991); https://doi.org/10.1117/12.43682

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