YBa2Cu3O7-x/Au/Nb device structures

Brian D. Hunt; Marc C. Foote; Louis J. Bajuk; Richard P. Vasquez

doi:10.1117/12.25735

1 March 1991 YBa₂Cu₃O_7-x/Au/Nb device structures

Brian D. Hunt, Marc C. Foote, Louis J. Bajuk, Richard P. Vasquez

Proceedings Volume 1394, Progress In High-Temperature Superconducting Transistors and Other Devices; (1991) https://doi.org/10.1117/12.25735
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Fabrication and testing of planar and edge geometry YBaCuO/Au/Nb superconductor/normal-metal/superconductor (SNS) device structures is described. Weak-link devices of this type serve as sensitive probes of the electrical quality of the YBaCuO/Au interface. The devices are fabricated using laser-ablated, in situ, c-axis-oriented YBaCuO thin films, with both annealed and unannealed YBaCuO/Au interfaces. The planar SNS structures are formed by sequential, in situ deposition of YBaCuO, Au, and Nb, followed by etching, planarization, and wiring electrode definition to produce junctions ranging from 5 to 20 micron on a side. Resulting RnA products are 1-10 x 10 to the -8th ohm-sq cm with critical current densities up to 5 kA/sq cm. For the edge geometry devices, the YBaCuO film edges are patterned using Ar ion milling, followed by a low energy ion cleaning step and in situ deposition of Au and Nb. Devices with areas in the 10 to the -7th to 10 to the -8th sq cm range have been fabricated with RnA products lower than 10 to the -8th ohm-sq cm and critical current densities up to 3kA/sq cm. Both types of devices show ac Josephson steps under microwave irradiation. The best results have been obtained with annealed YBaCuO/Au interfaces.

Citation Download Citation

Brian D. Hunt, Marc C. Foote, Louis J. Bajuk, and Richard P. Vasquez "YBa₂Cu₃O_7-x/Au/Nb device structures", Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); https://doi.org/10.1117/12.25735

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