Multichamber reactive ion etching processing for III-V optoelectronic devices

Mark A. Rothman; John A. Thompson; Craig A. Armiento

doi:10.1117/12.48951

1 March 1991 Multichamber reactive ion etching processing for III-V optoelectronic devices

Mark A. Rothman, John A. Thompson, Craig A. Armiento

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48951
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

A multistep reactive ion etching (RIE) process sequence has been developed for fabrication of optoelectronic devices in 111-V semiconductor materials. This process was developed in a multichamber RIlE system that has been adapted to use a different etch chemistry in each of the four chambers as well as robotic handling of small pieces of ITT-V materials. This system has been used to fabricate ridge waveguide lasers based on the TnPJTnGaAsP material system. The etch sequence consists of the following steps: SiNX patterning in an SF6 plasma photoresist removal in an plasma ridge formation in the InP and InGaAsP epitaxial layers using a CH4/H2/Ar plasma and polymer removal using an 0 2 plasma. Laser interferometry and emission spectroscopy techniques were used to establish endpoints for many of these process steps. Laser arrays with threshold currents as low as 22 mA have been routinely fabricated using this process.

Citation Download Citation

Mark A. Rothman, John A. Thompson, and Craig A. Armiento "Multichamber reactive ion etching processing for III-V optoelectronic devices", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48951

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