Wave-function engineering in Si-Ge microstructures: linear and nonlinear optical response

Milan Jaros; Richard M. Turton

doi:10.1117/12.24527

1 February 1991 Wave-function engineering in Si-Ge microstructures: linear and nonlinear optical response

Milan Jaros, Richard M. Turton

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24527
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The structural criteria for achieving the optimum linear and nonlinear optical response in Si-Ge superlattices is developed based on pseudopotential calculations and experimental data. A direct band gap is identified in Si(m)-Ge(n) superlattices for the condition at which m + n

Citation Download Citation

Milan Jaros and Richard M. Turton "Wave-function engineering in Si-Ge microstructures: linear and nonlinear optical response", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24527

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