Regular doping structures: a Si-based, quantum-well infrared detector

J. Frederick Koch

doi:10.1117/12.24521

1 February 1991 Regular doping structures: a Si-based, quantum-well infrared detector

J. Frederick Koch

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24521
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Semiconductor structures are discussed in which the dopant impurities are arranged in an ordered or at least a partially regular manner. Various electronic properties of such arrays are examined, and it is shown how a layer of dopant atoms in silicon acts as a sensitive and tunable IR absorber.

Citation Download Citation

J. Frederick Koch "Regular doping structures: a Si-based, quantum-well infrared detector", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24521

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