Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers

Bernard Sermage; M. Blez; Christophe Kazmierski; Abdallah Ougazzaden; Andrei Mircea; Jean-Claude Bouley

doi:10.1117/12.24568

1 February 1991 Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers

Bernard Sermage, M. Blez, Christophe Kazmierski, Abdallah Ougazzaden, Andrei Mircea, Jean-Claude Bouley

Author Affiliations +

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24568
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The influence of the doping level of the InP p type cladding layer on the differentialexternal efficiency 1Dand on the threshold current density th of 1 . 5 jtm InGaAs-InGaAsP-InP quantum well (QW) lasers has been investigated experimentally and theoretically. The experimental results agree at with our model which takes into account the recombinations and the light absorption in all the layers. This allows to predict the optimum values for the optical cavity thickness and for the number of wells to lower the threshold current.

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Bernard Sermage, M. Blez, Christophe Kazmierski, Abdallah Ougazzaden, Andrei Mircea, and Jean-Claude Bouley "Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24568

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