Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide

Michel Pugnet; Jacques H. Collet; Laurent Nardo

doi:10.1117/12.24390

1 March 1991 Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide

Michel Pugnet, Jacques H. Collet, Laurent Nardo

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24390
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Infrared photoexcitation of a SI GaAs sample generates photocurrents whose kinetics are interpreted in terms of photogeneration and thermal decay * * of the metastable state EL2 . The thermal deexcitation rate of EL2 is measured in the temperature range (240 K T 360 K). We demonstrate its thermally activated origin and we obtain : r 3. 3 lOt'' exp - O. 30/kT. Picosecond pulse and probe experiments are performed on the same sample. We observe an optical memory effect related to the optical generation of the * metastable state EL2 at room temperature. This effect persists over more than 10 ns.

Citation Download Citation

Michel Pugnet, Jacques H. Collet, and Laurent Nardo "Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24390

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