Excitonic photoabsorption study of AlGaAs/GaAs multiple-quantum-well grown by low-pressure MOCVD

O'Dae Kwon; Seung-Won Lee; Woong-Lim Choi; Kwang-Il Kim; Yoon-Ha Jeong

doi:10.1117/12.24293

1 March 1991 Excitonic photoabsorption study of AlGaAs/GaAs multiple-quantum-well grown by low-pressure MOCVD

O'Dae Kwon, Seung-Won Lee, Woong-Lim Choi, Kwang-Il Kim, Yoon-Ha Jeong

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24293
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

GaAS I AIGaAs multiple quantum well structures grown by low pressure metal organic chemical vapor deposition have been studied using electron microscopy photoluminescence photoabsorption and photocurrent spectroscopies. Room temperature exciton doublets quantum confined Stark shifts were observed and analysed.

Citation Download Citation

O'Dae Kwon, Seung-Won Lee, Woong-Lim Choi, Kwang-Il Kim, and Yoon-Ha Jeong "Excitonic photoabsorption study of AlGaAs/GaAs multiple-quantum-well grown by low-pressure MOCVD", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24293

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE