Active mode-locking of external cavity semiconductor laser with 1GHz repetition rate

Xianhua Wang; Guofu Chen; De-Sen Liu; Dalun Xu; ShuangChen Ruan

doi:10.1117/12.23964

1 April 1991 Active mode-locking of external cavity semiconductor laser with 1GHz repetition rate

Xianhua Wang, Guofu Chen, De-Sen Liu, Dalun Xu, ShuangChen Ruan

Proceedings Volume 1358, 19th Intl Congress on High-Speed Photography and Photonics; (1991) https://doi.org/10.1117/12.23964
Event: 19th International Congress on High-Speed Photography and Photonics, 1990, Cambridge, United Kingdom

Abstract

This paper discusses active mode-locking technique of semiconductor lasers at a repetition rate of 1GHz.In this work , we use microstrip line matching circuit which is especially designed to match impedances between an ultrahigh frequency source and a laser diode . The laser diodes used in our experiments have antireflection (AR) coatings on one facet . The /4 SlO AR coatings greatly reduce the etalon effects from the laser diode subcavlty . The reflectivity of one facet of lasers has less than 0.2 % . Operating characteristics of laser diodes are also described in this paper

Citation Download Citation

Xianhua Wang, Guofu Chen, De-Sen Liu, Dalun Xu, and ShuangChen Ruan "Active mode-locking of external cavity semiconductor laser with 1GHz repetition rate", Proc. SPIE 1358, 19th Intl Congress on High-Speed Photography and Photonics, (1 April 1991); https://doi.org/10.1117/12.23964

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