Paper
1 December 1990 Light scattering on nanoaggregates in bulk indium phosphide materials
Jean-Marc Lussert, Paul C. Montgomery, Jean-Pierre Fillard, Jacques Bonnafe
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Abstract
The scattering by small particules of an incident light beam of a prescribed polarisation is an important scientific problem. This study demonstratres that the distribution of microprecipitates included in semiconductor wafers, can be revealed and studied by scattering phenomena. Two kinds of scattering experiments have been carried out : Laser Scanning Tomography (LST) and Angular Scattering Analysis (ASA). ASA is based on scattering of an infra-red laser beam by microprecipitates contained in bulk material. The scattered light is collected by a camera and the corresponding signal sent to a computer. ASA is concerned with measuring the scattered intensity as a function of the scattering angle. LST also consists of analysing light scattered by microdefects. This technique has already been described in details in references 1,2 and 3. Scattering is a wide and complex mathematical problem, depending on a large number of parameters. The theoretical section of this paper refers to the Mie theory of single scattering for different particle shapes. Investigations have been performed on InP material, manufactured by the Liquid Encapsulated Czochralsky (LEC) technique. The samples were pulled in the <111> or <100> directions and were undoped, doped (Sn,S,Fe) or co-doped (Cds, S-Ge). This presentation gives results in terms of the evolution of the manufacturing quality, according to density, size of microprecipitates, and homogeneity of their distribution.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Marc Lussert, Paul C. Montgomery, Jean-Pierre Fillard, and Jacques Bonnafe "Light scattering on nanoaggregates in bulk indium phosphide materials", Proc. SPIE 1331, Stray Radiation in Optical Systems, (1 December 1990); https://doi.org/10.1117/12.22646
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KEYWORDS
Light scattering

Scattering

Laser scattering

Particles

Mie scattering

Semiconducting wafers

Cameras

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