Presentation + Paper
12 November 2024 Development of repairing technology for nanoimprint templates by multiple patterning technology
Takaharu Nagai, Hisayoshi Watanabe, Hideki Cho
Author Affiliations +
Abstract
Nanoimprint lithography, NIL, has garnered attention as a next-generation semiconductor manufacturing technology because of the advantage of higher resolution to ArF-i lithography and lower cost-of-ownership and power consumption to EUV lithography. Though EB repairing technology for 2X nm NIL templates was demonstrated in the past, resolution, yield and turnaround time of repairing remain significant challenges for sub 20nm feature size. In this work, we propose and evaluate a novel repair technology for NIL templates using multiple patterning techniques. We assessed the repair capability using programmed defects on 19nm line/space (L/S) patterns. Results demonstrate successful repair of a wide range of defects, from edge bumps to 45nm in size. Furthermore, we confirmed no significant impact from overlay errors of ±1nm. This method offers higher resolution and processing capability compared to conventional electron beam (EB) repair techniques, representing a significant step towards realizing sub-20nm defect-free NIL templates.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takaharu Nagai, Hisayoshi Watanabe, and Hideki Cho "Development of repairing technology for nanoimprint templates by multiple patterning technology", Proc. SPIE 13216, Photomask Technology 2024, 132161J (12 November 2024); https://doi.org/10.1117/12.3034660
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KEYWORDS
Nanoimprint lithography

Lithography

Electron beam lithography

Nanotechnology

Semiconductor manufacturing

Mask making

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