Leading edge photomasks require tighter accuracy than ever as wafer lithography advances to EUV and High-NA EUV. To expand process margin by photomask quality improvement, the CD uniformity and the small LER are important. To improve them for small patterns, dose correction as short range correction is more effective than geometry correction. Pixel Level Dose Correction (PLDC) is the dose correction capable of short range correction, and is developed and implemented as inline correction system for multi-beam mask writer MBM series from NuFlare Technology, Inc. To confirm mask quality improvement by PLDC, small patterns are printed on low sensitivity pCAR. 1D line patterns and contact patterns which suffers line edge roughness, showed improvements in LER and LCDU by edge dose enhancement by PLDC. Wafer printability simulation showed that PLDC improved LCDU same as mask patterning.
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