Study on γ-irradiation effect of silicon single photon avalanche diodes

Mingzhu Xun; Yudong Li; Mingyu Liu; Qi Guo

doi:10.1117/12.3024942

18 March 2024 Study on γ-irradiation effect of silicon Single Photon Avalanche Diodes

Mingzhu Xun, Yudong Li, Mingyu Liu, Qi Guo

Proceedings Volume 13104, Advanced Fiber Laser Conference (AFL2023); 1310477 (2024) https://doi.org/10.1117/12.3024942
Event: Advanced Fiber Laser Conference (AFL2023), 2023, Shenzhen, China

Abstract

In order to study the effect of ionizing radiation damage on the performance of silicon single photon avalanche diode (SPAD) in space radiation environment, the γ irradiation of SPAD were carried out under different conditions, and the changes of radiation sensitive parameters such as leakage current, dark count rate (DCR), 1/f noise of the SPAD were analyzed. The results show that the leakage current of the SPAD after 50krad(Si) irradiation under zero bias has not significantly changed, but the dark current has increased by a factor of one thousand under operating bias. After the total ionizing dose (TID) of 70krad(Si) γ irradiation, the DCR increased 6600cps under zero bias, but the number is 10100cps under operating bias. The 1/f noise shows that the number of oxide traps and interface traps generated by gamma ionization radiation enhances the fluctuation in carrier numbers, leading to an increase of 1/f noise. The 1/f noise can be reduced by 100°C annealing after 24h, but it cannot be restored to the level of fresh SPAD.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Mingzhu Xun, Yudong Li, Mingyu Liu, and Qi Guo "Study on γ-irradiation effect of silicon Single Photon Avalanche Diodes", Proc. SPIE 13104, Advanced Fiber Laser Conference (AFL2023), 1310477 (18 March 2024); https://doi.org/10.1117/12.3024942

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