We present the design and simulation of an integrated graphene-on-silicon nitride (GOSiN) dual-mode electroabsorption modulator at λ = 1550 nm. We started from designing GOSiN TE0 and TE1 mode filters with minimum length and insertion losses. Then, we designed a dual-mode modulator that combines both mode filters, tuning the absorption by applying a gate voltage. We show that the (0,0), (0,1), (1,0) and (1,1) logical values can be generated, with modulation depths up to 608-670 dB/cm for the TE0 mode and 228-284 dB/cm for the TE1 mode. Our results improve, to the best of our knowledge, the state of the art in integrated graphene dual-mode modulators, helping to develop efficient mode division multiplexing (MDM) on-chip interconnections.
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