Presentation + Paper
18 June 2024 Bi-junction electro-optic phase shifters
Author Affiliations +
Abstract
In this work, we propose and implement a bi-junction depletion-type silicon electro-optic phase shifter. The phase shifter has a lateral profile of implants, that closely resembles that of a common bipolar junction transistor, and thus, has two polarities. These are acceptor-donor-acceptor (PNP) as well as donor-acceptor-donor (NPN). We realize both variants in IMEC ISIPP50G open-access silicon photonic technology and compare them to lateral and interleaved phase shifters. Both PNP and NPN phase shifters exhibit a VπLπ figure that is at least 14.47% and up to 45.1% lower than that of the lateral and interleaved phase shifters realized in the same technology. Bi-junction phase shifters can be implemented in any planar silicon photonic technology that offers bipolar implantations within silicon photonic waveguides.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Mohamed Ashour, Eva M. Weig, and Jan Niklas Caspers "Bi-junction electro-optic phase shifters", Proc. SPIE 13012, Integrated Photonics Platforms III, 1301209 (18 June 2024); https://doi.org/10.1117/12.3013225
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KEYWORDS
Phase shifts

Electrooptics

Waveguides

Phase shifting

Silicon photonics

Design

Metals

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