Presentation + Paper
20 June 2024 High coherence broadly tunable semiconductor laser: inhibited versus strong non-linear light matter interaction
Mohamed Nadrani, Baptiste Chomet, Adrian Bartolo, Gregoire Beaudoin, Konstantinos Pantzas, Isabelle Sagnes, Stephane Blin, Arnaud Garnache
Author Affiliations +
Abstract
We demonstrate two highly coherent tunable high power laser concepts, based on a III-V semiconductor VECSEL technology, operating in the 1μm wavelength range. We report experimentally and theoretically the existence of deterministic dynamics of a coherent semiconductor laser field, with a route to robust single-frequency operation exhibiting broad nonlinear frequency pulling far above the thermally-assisted conventional tuning range. Thanks to a complementary design, we demonstrate an inhibited laser state exhibiting high power, high spatial and temporal coherence under ultralow light matter interaction, overcoming fundamental and technical limitations of common on the shelf laser technology, like quantum, electronic and thermal noise, as well as thermal lensing induced wave aberration.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Mohamed Nadrani, Baptiste Chomet, Adrian Bartolo, Gregoire Beaudoin, Konstantinos Pantzas, Isabelle Sagnes, Stephane Blin, and Arnaud Garnache "High coherence broadly tunable semiconductor laser: inhibited versus strong non-linear light matter interaction", Proc. SPIE 13002, Semiconductor Lasers and Laser Dynamics XI, 130020J (20 June 2024); https://doi.org/10.1117/12.3022556
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Vertical external cavity surface emitting lasers

Laser-matter interactions

Physical coherence

Laser frequency

Mirrors

High power lasers

Back to Top