Presentation + Paper
18 June 2024 CMOS sensor for subnanosecond integrated Streak camera
Author Affiliations +
Abstract
This work presents a new burst mode CMOS image sensor in 0.35 μm SiGe BiCMOS technology that can achieve a pixel rate of 1 TS/s. The sensor employs a novel integrated Streak architecture that includes a vector of 200 integrated photodiodes, each connected to a wideband transimpedance amplifier, and a 200 points deep analogue on-chip memory for burst imaging. Placing the pixel electronics next to the photodector results in a high fill factor of 84 %. The circuit has a closed loop delay generator that allows sampling speeds from 50 μs to 200 ps, resulting in the largest range recorded for a monolithic CMOS sensor to date. The sensor features a post-trigger functionality to avoid synchronization issues during event recording. For the recording of repetitive events, the sensor has a new accumulation mode to enhance the signal to noise ratio (SNR) by reducing the bandwidth of the sample and hold circuit, thus allowing the SNR to be increased by a factor of sqrt(10) per decade. The state-of-the-art time resolution makes this sensor ideal for observing subnanosecond events. It finds applications in various fields, including fluorescence metrology, time-resolved spectroscopy, optical tomography, laser Doppler velocimetry, and detonics.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Pierre Willinger-Adam, Wilfried Uhring, Jean-Baptiste Schell, Vincent Wlotzko, and Patrick Summ "CMOS sensor for subnanosecond integrated Streak camera", Proc. SPIE 12996, Unconventional Optical Imaging IV, 129960L (18 June 2024); https://doi.org/10.1117/12.3021396
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KEYWORDS
Streak cameras

Sensors

Photodiodes

Tunable filters

Analog electronics

Sampling rates

Cameras

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