Analysis of oscillation suppression of GaN HEMT devices in energy storage inverter

Zhizhong Ke; Zui Tao; Haolin Wang

doi:10.1117/12.3015246

6 February 2024 Analysis of oscillation suppression of GaN HEMT devices in energy storage inverter

Zhizhong Ke, Zui Tao, Haolin Wang

Proceedings Volume 12979, Ninth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2023); 129791V (2024) https://doi.org/10.1117/12.3015246
Event: 9th International Conference on Energy Materials and Electrical Engineering (ICEMEE 2023), 2023, Guilin, China

Abstract

With the wave of distributed generation, the application scenarios of energy storage inverters are increasing, people introduce GaN High Electron Mobility Transistors (HEMT) devices into the energy storage inverter system to pursue higher performance. GaN HEMT devices in the realization of high-frequency control, inevitably bring the problem of gate source oscillation, which poses a challenge to the safety and stability of the energy storage inverter system. In this study, the gate-source oscillation problem of GaN HEMT devices in energy storage inverters was studied and simulated, and the gate-source oscillation was suppressed by introducing RC snubber circuit in the design. The introduced RC circuit realizes the effective suppression of gate-source oscillation in the energy storage inverter system. In this study, the gate-source oscillation of GaN HEMT devices was suppressed in the energy storage inverter system, and the overall stability and reliability of the energy storage inverter system using GaN HEMT devices were improved.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Zhizhong Ke, Zui Tao, and Haolin Wang "Analysis of oscillation suppression of GaN HEMT devices in energy storage inverter", Proc. SPIE 12979, Ninth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2023), 129791V (6 February 2024); https://doi.org/10.1117/12.3015246

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