Suzanne Coley,1 Jong Keun Park,1 Emad Aqad,1 Yinjie Cenhttps://orcid.org/0000-0003-4540-5880,1 Li Cui,1 Conner Hoelzel,1 Benjamin D. Naab,1 Maria Melanson,1 Hung Tran,1 Stefan Alexandrescu,1 Rochelle Rena,1 Jason Behnke,1 Karen E. Petrillo2
1DuPont Electronics and Industrial (United States) 2IBM Thomas J. Watson Research Ctr. (United States)
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We report on the relationship between resist make-up, filtration process & CH AEI defectivity for an advanced CAR resist with fast dose. In particular, the effect of a pattern transfer scheme on a resist platform with formulation & filtration variation is examined. Resist design & manufacturing strategies for continuous improvement of EUV CAR lithographic performance will be discussed.
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Suzanne Coley, Jong Keun Park, Emad Aqad, Yinjie Cen, Li Cui, Conner Hoelzel, Benjamin D. Naab, Maria Melanson, Hung Tran, Stefan Alexandrescu, Rochelle Rena, Jason Behnke, Karen E. Petrillo, "Formulation and filtration strategies to reduce etch related defectivity of advanced chemically amplified EUV resist," Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129571Y (10 April 2024); https://doi.org/10.1117/12.3010919