Latest advances in EUV patterning for preparation of high numerical aperture EUV

Soichiro Okada; Arnaud Dauendorffer; Yuhei Kuwahara; Cong Que Dinh; Ken Ando; Atsushi Tsuboi; Kathleen Nafus; Nobuyuki Fukui; Philippe Foubert; Danilo De Simone

doi:10.1117/12.3010713

10 April 2024 Latest advances in EUV patterning for preparation of high numerical aperture EUV

Soichiro Okada, Arnaud Dauendorffer, Yuhei Kuwahara, Cong Que Dinh, Ken Ando, Atsushi Tsuboi, Kathleen Nafus, Nobuyuki Fukui, Philippe Foubert, Danilo De Simone

Author Affiliations +

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129571W (2024) https://doi.org/10.1117/12.3010713
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

EUV lithography has already introduced in high volume manufacturing and continuous improvements has allowed to resolve pitch 24nm line and space (L/S), pitch 32nm contact hole and pillar pattern with single exposure at even numerical aperture (NA) 0.33. However, pattern roughness, local critical dimension uniformity (LCDU) and process related defects are still major challenges with decreasing critical dimensions (CD). Pitch downscaling also require the use of thinner photoresist mask to prevent pattern collapse from high aspect ratios. Thinner photoresist mask is challenging for pattern transfer because the resist “etch budget” is becoming too small to prevent pattern break during plasma etch transfer. It is required to investigate a co-optimization of lithography processes, underlayers and etch processes to further EUV patterning extension. In this paper, our latest developed process solutions to extend the limits of EUV patterning will be reported. The advanced performance for metal oxide resists (MOR) will be introduced, with a focus on defect mitigation, dose reduction strategies and CD stability.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Soichiro Okada, Arnaud Dauendorffer, Yuhei Kuwahara, Cong Que Dinh, Ken Ando, Atsushi Tsuboi, Kathleen Nafus, Nobuyuki Fukui, Philippe Foubert, and Danilo De Simone "Latest advances in EUV patterning for preparation of high numerical aperture EUV", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129571W (10 April 2024); https://doi.org/10.1117/12.3010713

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