Mechanisms of reactions occurring in chemically amplified resists (CARs) upon exposure to EUV light, and their effects on latent image formation, remain poorly understood. To better control stochastics related to chemical reactivity in CARs, our goal is to develop a model that correctly captures the rates of formation of products that can be experimentally measured in an ESCAP photoresist upon exposure to EUV light. We have previously reported the generation of a chemical reaction network that describes reactions likely to occur upon EUV exposure of a random copolymer of poly(hydroxystyrene) and poly(methylmethacrylate), triphenylsulfonium nonaflate, and triphenylsulfonium cyanobenzoate. Here, we detail the use of this network to create a reaction-diffusion model where photoionization, electron ionization, and electron attachment occur, as well as reactions between ions and species formed from photon- and electron-catalyzed processes. Results from this model can be directly compared to future experimental work conducted on ESCAP photoresists.
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