Overlay metrology performance of dry photoresist towards high NA EUV lithography

Eren Canga; Victor Blanco; Anne-Laure Charley; Cyrus Tabery; Gabriel Zacca; Nader Shamma; Benjamin Kam; Mohand Brouri

doi:10.1117/12.3010115

9 April 2024 Overlay metrology performance of dry photoresist towards high NA EUV lithography

Eren Canga, Victor Blanco, Anne-Laure Charley, Cyrus Tabery, Gabriel Zacca, Nader Shamma, Benjamin Kam, Mohand Brouri

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129551R (2024) https://doi.org/10.1117/12.3010115
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

In this work, we study the optical overlay metrology performance and impact of an integrated hard mask etch step using the dry resist process with High Numerical Aperture Extreme Ultraviolet Lithography (High NA EUVL)-related thicknesses. Diffraction-based overlay measurements were performed after dry development and integrated hard mask etching for different overlay target designs. The measurement precision for the after-dry development measurement is shown, and the benefits of using integrated hard mask etch overlay metrology with respect to after-dry development are discussed.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Eren Canga, Victor Blanco, Anne-Laure Charley, Cyrus Tabery, Gabriel Zacca, Nader Shamma, Benjamin Kam, and Mohand Brouri "Overlay metrology performance of dry photoresist towards high NA EUV lithography", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129551R (9 April 2024); https://doi.org/10.1117/12.3010115

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