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We propose a robust dynamic spectroscopic imaging ellipsometer (DSIE) as a future high-throughput full pattern wafer inspection candidate in semiconductor MI fields. In this study, we demonstrate a Linnik-type monolithic polarizing interferometer scheme combined with a simple spectrometer-based compensation channel can enhance system robustness and stability drastically. Also, we address the importance of the global mapping phase error compensation method by which highly reliable 3-D cubic spectroscopic ellipsometric parameter mapping capability can be provided for a large-scale specimen. To show the efficacy of the proposed compensation method experimentally, we measure a 12-inch full size silicone-dioxide thin film and a 8-inch nano-pattern wafer in a general environment where various external disturbances can affect the system stability.
G. Hwang,S. Kheiryzadehkhanghah,S. Choi,I. Choi,S. Kim, andD. Kim
"Dynamic spectroscopic imaging ellipsometer for high-throughput full patterned wafer mapping", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129550C (9 April 2024); https://doi.org/10.1117/12.3011003
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G. Hwang, S. Kheiryzadehkhanghah, S. Choi, I. Choi, S. Kim, D. Kim, "Dynamic spectroscopic imaging ellipsometer for high-throughput full patterned wafer mapping," Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129550C (9 April 2024); https://doi.org/10.1117/12.3011003