Presentation + Paper
9 April 2024 Dynamic spectroscopic imaging ellipsometer for high-throughput full patterned wafer mapping
G. Hwang, S. Kheiryzadehkhanghah, S. Choi, I. Choi, S. Kim, D. Kim
Author Affiliations +
Abstract
We propose a robust dynamic spectroscopic imaging ellipsometer (DSIE) as a future high-throughput full pattern wafer inspection candidate in semiconductor MI fields. In this study, we demonstrate a Linnik-type monolithic polarizing interferometer scheme combined with a simple spectrometer-based compensation channel can enhance system robustness and stability drastically. Also, we address the importance of the global mapping phase error compensation method by which highly reliable 3-D cubic spectroscopic ellipsometric parameter mapping capability can be provided for a large-scale specimen. To show the efficacy of the proposed compensation method experimentally, we measure a 12-inch full size silicone-dioxide thin film and a 8-inch nano-pattern wafer in a general environment where various external disturbances can affect the system stability.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Hwang, S. Kheiryzadehkhanghah, S. Choi, I. Choi, S. Kim, and D. Kim "Dynamic spectroscopic imaging ellipsometer for high-throughput full patterned wafer mapping", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129550C (9 April 2024); https://doi.org/10.1117/12.3011003
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KEYWORDS
Imaging spectroscopy

Imaging systems

Interferometry

Spectroscopic ellipsometry

Thin films

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