Paper
24 November 2023 Simulation analysis of thermally induced deformation on reticle for deep ultraviolet lithography
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Proceedings Volume 12935, Fourteenth International Conference on Information Optics and Photonics (CIOP 2023); 1293559 (2023) https://doi.org/10.1117/12.3008409
Event: Fourteenth International Conference on Information Optics and Photonics (CIOP 2023), 2023, Xi’an, China
Abstract
In deep ultra violet (DUV) lithography, the thermal deformation of the reticle reduces the quality of the reticle pattern transferred to the silicon wafer, and also causes errors in the image quality measurement of the projection objective. Therefore, it is necessary to establish a physical model to study the thermal deformation rule of reticle, so as to provide theoretical support for the development of reticle thermal deformation correction method. This paper employs finite element method (FEM) simulations to investigate DUV lithographic reticle thermal deformation. Results show that under 263.7 W/m² irradiation, reticle temperature and deformation increase, reaching dynamic equilibrium. Maximum equilibrium temperature is 302 K; reticle deformation equilibrium values (Δxr, Δyr) at maximum field of view (FOV) are (21 nm, −18 nm). This work highlights the intricate interaction between thermal forces and reticle deformation, emphasizing the need to manage these effects for lithography. Such insights are crucial for advancing semiconductor fabrication processes.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yisha Cao, Yunjun Lu, Peng Feng, Rong Su, and Xiangzhao Wang "Simulation analysis of thermally induced deformation on reticle for deep ultraviolet lithography", Proc. SPIE 12935, Fourteenth International Conference on Information Optics and Photonics (CIOP 2023), 1293559 (24 November 2023); https://doi.org/10.1117/12.3008409
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KEYWORDS
Reticles

Thermal deformation

Deformation

Light sources

Lithography

Optical gratings

Deep ultraviolet

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