Paper
1 October 1990 Sources, detectors, and wavequide components for OEICs
Author Affiliations +
Abstract
Current research on optoeletronics is reviewed with particular attention given to thin film devices from II-VI and III-V compound semiconductors. Major achievements made since 1988 include development of world-class growth facilities for ZnSe and III-V compound semiconductor epitaxial layers and processing of these materials into devices with world-record performance characteristics.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul H. Holloway "Sources, detectors, and wavequide components for OEICs", Proc. SPIE 1291, Optical and Digital Gallium Arsenide Technologies for Signal Processing Applications, (1 October 1990); https://doi.org/10.1117/12.20997
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KEYWORDS
Gallium arsenide

Semiconductor lasers

Quantum wells

Metalorganic chemical vapor deposition

Optoelectronics

Photodetectors

Sensors

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