DC linearity and absorption efficiency enhancement by introducing photon-trapping microstructures into avalanche photodetectors

Lisa N. McPhillips; Amita Rawat; Ahasan Ahamed; M. Saif Islam

doi:10.1117/12.3003649

8 March 2024 DC linearity and absorption efficiency enhancement by introducing photon-trapping microstructures into avalanche photodetectors

Lisa N. McPhillips, Amita Rawat, Ahasan Ahamed, M. Saif Islam

Author Affiliations +

Proceedings Volume 12895, Quantum Sensing and Nano Electronics and Photonics XX; 128950G (2024) https://doi.org/10.1117/12.3003649
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

The direct-current (DC) linearity of a photodiode is a parameter that indicates the direct proportionality between the input optical power and the output response current. This linear relationship defines the optical power range using which the performance limits of the photodiode control circuitry such as A/D conversion, trans-impedance amplifier, and quenching circuits are designed. Due to the absorption saturation and self-heating, the response current of the photodiode starts to saturate at higher optical power. A narrow absorber region in state-of-the-art photodiodes (avalanche and PIN photodiodes) results in an early absorption saturation in addition to a reduction in absorption efficiency. We present a photon-trapping microstructure (PTMS) equipped-avalanche photodiodes (APD) to enhance the absorption efficiency and DC linearity. We have fabricated a mesa-based APD using complementary metal oxide semiconductor (CMOS)-compatible processes. We present a DC current-voltage comparison of APDs in the dark and under the illumination of a wide wavelength range varying from 640 nm to 1100 nm. The fabricated PTMS-equipped APDs exhibit 5× increase in the external quantum efficiency as opposed to that of a flat device and a 70 unit multiplication gain. Further, the PTMS-equipped APDs demonstrate an increased linearity of 106.04 dB in comparison to 104.83 dB linearity in the flat device. The introduction of PTMS, despite the reduction of net-absorber volume, enables a uniform spread of the input illumination power by bending the light laterally and results in increased absorption efficiency and DC linearity.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Lisa N. McPhillips, Amita Rawat, Ahasan Ahamed, and M. Saif Islam "DC linearity and absorption efficiency enhancement by introducing photon-trapping microstructures into avalanche photodetectors", Proc. SPIE 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950G (8 March 2024); https://doi.org/10.1117/12.3003649

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE