Plasma conduction mechanism in topological insulators

Nadezhda P. Netesova

doi:10.1117/12.2685369

15 March 2024 Plasma conduction mechanism in topological insulators

Nadezhda P. Netesova

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 128870I (2024) https://doi.org/10.1117/12.2685369
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

The conducting properties of crystal topological insulators and Weyl semimetals within the plasma mechanism of superconductivity have been considered. Such compounds A2B3, AB2, AB are bismuth selenide Bi2Se3 and telluride Bi2Te3, antimony telluride Sb2Te3 and their solid solutions, tungsten telluride WTe2, magnesium diboride MgB2, tantalum arsenide TaAs, tantalum phosphide TaP, niobium arsenide NbAs, niobium phosphide NbP. The equation has been proposed 2 AB = A2 + B2 + ▴Φ. Square plasma electron energies Φ² (ρ, s, M, q, β), square electron splitting energies ▴Φ² in (eV)² were calculated, where Φ² (ab), Φ² (a), Φ² (b) – square electron energy AB, A, B, ▴Φ² is square energy splitting of compounds into diatomic molecules at absolute zero Tc = 0, respectively, ρ is the density, s is the number of valence electrons, M is the molecular (atomic) mass, q and β are parameters. ▴Φ² (Bi2Se3) = 765.70143384 ▴Φ² (Bi2Te3) = 672.88715592 ▴Φ² (Sb2Te3) = 704.74855610 ▴Φ² (WTe2) = 367.01888428 ▴Φ² (MgB2) = 435.17777627 ▴Φ² (TaAs) = ▬102.44793138 ▴Φ² (TaP) = ▬246.35400903 ▴Φ² (NbAs) = ▬83.59742866 ▴Φ² (NbP) = ▬241.26056837. β = 2.5, q (Bi2Se3) = 1.02608569, Tc = ▬ 7.3039932 K β = 2.5, q (Bi2Te3) = 0.997794409, Tc = 0.61756548 K β = 2.5, q (Sb2Te3) = 1.015846129, Tc = ▬ 4.43691612 K According to our calculations, superconductivity of doped A2B3 topological insulators was found above absolute zero temperature. Additional restrictions are caused by strong spin-orbit coupling. Theoretical calculations are confirmed by known experimental data.

Conference Presentation

Citation Download Citation

Nadezhda P. Netesova "Plasma conduction mechanism in topological insulators", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 128870I (15 March 2024); https://doi.org/10.1117/12.2685369

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