Crystal growth and power device applications of β-Ga2O3

K. Sasaki; A. Kuramata

doi:10.1117/12.3013494

15 March 2024 Crystal growth and power device applications of β-Ga₂O₃

K. Sasaki, A. Kuramata

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 1288707 (2024) https://doi.org/10.1117/12.3013494
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Development of β-Ga₂O₃ power devices has been accelerating over the past few years. In particular, 4-inch device-quality β-Ga₂O₃ epi wafers have become commercially available, and low-loss trench MOS-type SBDs, and normally-off MOSFETs have been demonstrated. In this paper, we will explain recent progress in crystal growth techniques for β-Ga₂O₃ and power devices based on this material.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

K. Sasaki and A. Kuramata "Crystal growth and power device applications of β-Ga₂O₃", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 1288707 (15 March 2024); https://doi.org/10.1117/12.3013494

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