Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD

Filip Gucmann; Milan Ťapajna; Kristína Hušeková; Edmund Dobročka; Alica Rosová; Peter Nádaždy; Peter Eliáš; Fridrich Egyenes; Fedor Hrubišák; Hemendra Chouhan; Javad Keshtkar; Xiang Zheng; James W. Pomeroy; Martin Kuball; Xinglin Xiao; Yali Mao; Biwei Meng; Guoliang Ma; Chao Yuan

doi:10.1117/12.3013087

15 March 2024 Thermal properties of Ga₂O₃ thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD

Filip Gucmann, Milan Ťapajna, Kristína Hušeková, Edmund Dobročka, Alica Rosová, Peter Nádaždy, Peter Eliáš, Fridrich Egyenes, Fedor Hrubišák, Hemendra Chouhan, Javad Keshtkar, Xiang Zheng, James W. Pomeroy, Martin Kuball, Xinglin Xiao, Yali Mao, Biwei Meng, Guoliang Ma, Chao Yuan

Author Affiliations +

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 1288705 (2024) https://doi.org/10.1117/12.3013087
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Gallium oxide (Ga₂O₃) is a promising ultra-wide bandgap (UWBG) semiconductor that was quickly recognised as a suitable material for fabrication of optoelectronic devices or high-power rectifiers and switches, potentially greatly exceeding the capabilities of mainstream Si, GaN, and SiC. Despite many advantageous material properties, large-area bulk Ga₂O₃ substrates remain expensive, and Ga₂O₃ itself suffers from low lattice thermal conductivity – crucial for an efficient heat extraction from the active device area, generated by Joule losses during the on-state operating conditions. Heteroepitaxy of Ga₂O₃ films offers a possible route for a low-cost production of Ga₂O₃-based power or optoelectronic devices if e.g. sapphire substrates are used, or much improved thermal performance if highly-thermally-conductive substrates such as SiC or polycrystalline diamond are used. In this work we use liquid-injection metalorganic chemical vapour deposition (LI-MOCVD) to grow thin Ga₂O₃ films on sapphire and 4H-SiC and to fabricate depletion-mode metal-oxide-semiconductor field-effect transistors (MOSFETs). Structural and transport properties of the Ga₂O₃ films and devices prepared on both substrates are analysed. Then, thermal properties of grown Ga₂O₃ films, and Ga₂O₃/SiC and Ga₂O₃/sapphire interfaces are presented and implications for Ga₂O₃-based devices are outlined.

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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Filip Gucmann, Milan Ťapajna, Kristína Hušeková, Edmund Dobročka, Alica Rosová, Peter Nádaždy, Peter Eliáš, Fridrich Egyenes, Fedor Hrubišák, Hemendra Chouhan, Javad Keshtkar, Xiang Zheng, James W. Pomeroy, Martin Kuball, Xinglin Xiao, Yali Mao, Biwei Meng, Guoliang Ma, and Chao Yuan "Thermal properties of Ga₂O₃ thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 1288705 (15 March 2024); https://doi.org/10.1117/12.3013087

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