Determination of the electric field in the Ga1-xAlxAs/GaAs heterojunctions from the Franz-Keldysh oscillations by photoreflectance spectroscopy

Cesar A.C. Mendonca; L. M. R. Scolfaro; Elio Meneses; J. M. V. Martins; J. Roberto Leite

doi:10.1117/12.20866

1 August 1990 Determination of the electric field in the Ga1-xAlxAs/GaAs heterojunctions from the Franz-Keldysh oscillations by photoreflectance spectroscopy

Cesar A.C. Mendonca, L. M. R. Scolfaro, Elio Meneses, J. M. V. Martins, J. Roberto Leite

Author Affiliations +

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20866
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The technique of photoreflectance (PR) spectroscopy has been applied to study the two-dimensional electron gas (2DEG) in a modulation-doped GaAlAs/GaAs heterojunction. We investigate the dependence on temperature of the PR results. At room temperature Franz-Keldysh oscillations-like features are observed. The energy spacing of this oscillations decreases with temperature. Theoretical self-consistent calculations have been carried out to determine the potential profile and sub-band energies in this system. The comparison of the values for the electric field estimated from the calculations and those extracted from the experiment suggests that the observed features are due to the electric field in the space charge region.

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Cesar A.C. Mendonca, L. M. R. Scolfaro, Elio Meneses, J. M. V. Martins, and J. Roberto Leite "Determination of the electric field in the Ga1-xAlxAs/GaAs heterojunctions from the Franz-Keldysh oscillations by photoreflectance spectroscopy", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20866

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