InAs/Ga1-xInxSb superlattices for infrared applications

Richard H. Miles; David H. Chow; Thomas C. McGill Jr.

doi:10.1117/12.20815

1 October 1990 InAs/Ga1-xInxSb superlattices for infrared applications

Richard H. Miles, David H. Chow, Thomas C. McGill Jr.

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20815
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We report the successful growth of EnAs/Gai_InSb strained-layer superlattices, which have been proposed for far-infrared applications. Samples were grown by molecular beam epitaxy and characterized by reflection high energy electron diffraction, transmission electron microscopy, x-ray diffraction, photoluminescence, and photoconductivity. Excellent structural quality is achieved for superlattices grown on thick, strain relaxed GaSb buffer layers on GaAs substrates at fairly low substrate temperatures (< 400 °C). Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strained-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, in agreement with the theoretical predictions of Smith and Mailhiot.1'2 In the case of a 45 A/28 A InAs/Gao.751no25Sb superlattice, an energy gap of 80meV (> 15 jim) is measured. These resuits suggest that far-infrared cutoff wavelengths are compatible with the thin superiattice layers required for strong optical absorption in type-Il superlattices.

Citation Download Citation

Richard H. Miles, David H. Chow, and Thomas C. McGill Jr. "InAs/Ga1-xInxSb superlattices for infrared applications", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20815

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