Individual defect dynamics and quantum-transport effects in metal nanobridges

Daniel C. Ralph; Kristin S. Ralls; Robert A. Buhrman

doi:10.1117/12.20767

1 October 1990 Individual defect dynamics and quantum-transport effects in metal nanobridges

Daniel C. Ralph, Kristin S. Ralls, Robert A. Buhrman

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20767
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We have fabricated metal constrictions having diameters as small as 3 nm. This is narrow enough that effects due to single defects within the constriction region are visible as changes in the resistance. We will discuss the voltage and temperature dependence of the individual defect motion that can lead to electromigration in these samples. We will also present observations of magnetic defects and the presence of time-independent conductance fluctuations in these ballistic devices.

Citation Download Citation

Daniel C. Ralph, Kristin S. Ralls, and Robert A. Buhrman "Individual defect dynamics and quantum-transport effects in metal nanobridges", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20767

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available