Delocalization of the excitons via the X-valley in GaAs/A1As quantum wells

Mitra B. Dutta; Doran D. Smith; Peter G. Newman; Xichun C. Liu; Athos P. Petrou

doi:10.1117/12.20746

1 October 1990 Delocalization of the excitons via the X-valley in GaAs/A1As quantum wells

Mitra B. Dutta, Doran D. Smith, Peter G. Newman, Xichun C. Liu, Athos P. Petrou

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20746
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The results of magnetoreflection, photoluminescence and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X-band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X-band of AlAs.

Citation Download Citation

Mitra B. Dutta, Doran D. Smith, Peter G. Newman, Xichun C. Liu, and Athos P. Petrou "Delocalization of the excitons via the X-valley in GaAs/A1As quantum wells", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20746

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