Paper
16 August 2023 TSV filling with copper electro-deposition by using phenyl disulfide propane sodium
Yuping Le
Author Affiliations +
Proceedings Volume 12787, Sixth International Conference on Advanced Electronic Materials, Computers, and Software Engineering (AEMCSE 2023); 127870A (2023) https://doi.org/10.1117/12.3004800
Event: 6th International Conference on Advanced Electronic Materials, Computers and Software Engineering (AEMCSE 2023), 2023, Shenyang, China
Abstract
Through Silicon Via (TSV) is a promising microelectronic interconnection technology in Three-dimensional integration (3D). Three-component additives are used for non-porous TSV filling. However, various experiments must be carried out to optimize the concentrations of various additives. To avoid this expensive process, Phenyl disulfide propane sodium (BSP) in the TSV filling is investigated and the correlation between the copper seed layer surface and molecular structure were simulated through molecular dynamics using materials studio software. It can be seen that the BSP concentration is 0.1 g/L, the inhibitor AESS is 1.0 g/L, the current density is 2 A/cm2 , and after 6 hours of electroplating, the TSV filling assumes a "V" growth mode, which can obtain a defect free TSV copper plating filling result.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yuping Le "TSV filling with copper electro-deposition by using phenyl disulfide propane sodium", Proc. SPIE 12787, Sixth International Conference on Advanced Electronic Materials, Computers, and Software Engineering (AEMCSE 2023), 127870A (16 August 2023); https://doi.org/10.1117/12.3004800
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KEYWORDS
Copper

Electroplating

Plating

Adsorption

Scanning electron microscopy

Sodium

Chemical species

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