Paper
21 November 2023 The x-ray absorption spectroscopy analysis of the negative-tone PAG bound resist
Shinji Yamakawa, Tetsuo Harada, Takeo Watanabe
Author Affiliations +
Abstract
Development of new EUV resists is required for next-generation EUV lithography. A resist in which a large amount of photoacid generator (PAG) is introduced into the polymer side chain has been reported as a high-resolution nonchemically amplified negative-tone resist. In this study, we synthesized a new high-PAG loading-type negative-tone resist as a model resist, evaluated EUV sensitivity by flood exposure, and also performed carbon K-edge and sulfur Ledge X-ray absorption spectroscopy (XAS) analysis. The synthesized high-PAG loading bound resist had a 79 mol% PAG unit in the polymer side chain. After the EUV exposure, the resist behaved as a negative-tone resist in the alkaline developer and a positive-tone resist in the organic developer. From the results of the XAS analysis, the possible decomposition mechanisms of the PAG unit in the polymer were estimated.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Shinji Yamakawa, Tetsuo Harada, and Takeo Watanabe "The x-ray absorption spectroscopy analysis of the negative-tone PAG bound resist", Proc. SPIE 12750, International Conference on Extreme Ultraviolet Lithography 2023, 127500Y (21 November 2023); https://doi.org/10.1117/12.2687118
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KEYWORDS
Absorption spectroscopy

Chemical analysis

X-rays

Extreme ultraviolet

Line width roughness

Polymers

Semiconducting wafers

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