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Here we demonstrate Tungsten Disulfide (WS2) integrated silicon nitride photodetector, and we experimentally tested the responsivity of 0.32 A/W. The spectroscopic results using PL and Raman mapping were used to understand strain effect on excitonic bandgap by studying characteristics like excitons, trions, E12g, A1g and opto-electronic response. We show high potential for flexible sensors and high spectral resolution sensing.
Conference Presentation
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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