Paper
31 January 2023 Passivation of InSb photodetectors with atomic layer deposited Al2O3
Ailiang Cui, Xubo Zhu, Zhenming Ji, Peng Wei, Yanqiu Lv
Author Affiliations +
Proceedings Volume 12505, Earth and Space: From Infrared to Terahertz (ESIT 2022); 125050S (2023) https://doi.org/10.1117/12.2665588
Event: Earth and Space: From Infrared to Terahertz (ESIT 2022), 2022, Nantong, China
Abstract
The preparation of surface passivation layers on InSb is essential in the process of device fabrication. An Al2O3 passivation film was deposited on the surface of medium wave InSb film by atomic layer deposition (ALD). A series of variable area photodiode devices with different P/A ratios were fabricated. The performance of the device is characterized at 77K. The effects of ALD Al2O3 and anodic oxidation on the leakage current of diode devices were investigated. The surface leakage current of the passivated photodetectors was reduced by an order of magnitude over the anode sulfidation passivated photodetectors. Moreover, the metal-insulator-semiconductor (MIS) device were developed respectively, and the effects of different films as a dielectric layer on the interfacial characteristics were investigated.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ailiang Cui, Xubo Zhu, Zhenming Ji, Peng Wei, and Yanqiu Lv "Passivation of InSb photodetectors with atomic layer deposited Al2O3", Proc. SPIE 12505, Earth and Space: From Infrared to Terahertz (ESIT 2022), 125050S (31 January 2023); https://doi.org/10.1117/12.2665588
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KEYWORDS
Atomic layer deposition

Aluminum

Oxides

Interfaces

Zinc

Photodetectors

Antimony

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