Poster + Paper
30 April 2023 Recent advances in EUV patterning in preparation towards high-NA EUV
Author Affiliations +
Conference Poster
Abstract
High-NA EUV lithography is currently under development to keep up with device node scaling with smaller feature sizes. In this paper, the most recent advances in EUV patterning using metal oxide resists (MOR) and chemically amplified resists (CAR) are discussed. A newly developed resist development method (ESPERT™) was examined on MOR with 24 nm pitch line and space (L/S) patterns and 32 nm pitch pillars for preparation of high-NA EUV patterning. The patterning results showed improved sensitivity and pattern collapse margin. CAR contact hole patterning at 28 nm pitch was also examined by stochastic lithography simulation. The simulation results indicate that resist film thickness needs to be optimized for target pitches.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiji Nagahara, Arnaud Dauendorffer, Arame Thiam, Xiang Liu, Yuhei Kuwahara, Cong Que Dinh, Soichiro Okada, Shinichiro Kawakami, Hisashi Genjima, Noriaki Nagamine, Makoto Muramatsu, Satoru Shimura, Atsushi Tsuboi, Kathleen Nafus, Yannick Feurprier, Marc Demand, Rajesh Ramaneti, Philippe Foubert, Danilo De Simone, and Geert Vendenberghe "Recent advances in EUV patterning in preparation towards high-NA EUV", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124981G (30 April 2023); https://doi.org/10.1117/12.2657432
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KEYWORDS
Optical lithography

Extreme ultraviolet

Extreme ultraviolet lithography

Etching

Interfaces

Coating thickness

Lithography

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