Metal oxide (MOx) photoresists have matured into a leading platform for advanced-node EUV Lithography, particularly for tight pitches and High-NA applications. To meet the requirements for High-NA, there must be simultaneous improvements in resist design, processing, and metrology.
Here, we evaluate new resist and process modifications through detailed roughness analysis. Specifically, we evaluate the impact of resist formulation improvements and different development processes that take advantage of the MOx platform, and the performance of MOx resists at different film thicknesses. Additionally, we investigate the impact of etch and discuss strategies for metrology improvement as the industry prepares for High-NA.
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