Presentation + Paper
28 April 2023 Depth of focus in high-NA EUV lithography: the role of assist features and their variability budget
Author Affiliations +
Abstract
In this paper, the role of sub-resolution assist features (SRAFs) in 0.55NA EUV lithography is discussed. We demonstrate how SRAFs help with pattern placement error (PPE) control through exposure focus on horizontal line/space structures using dark field masks. Even for 26nm minimum pitch design rules (relatively high k1), SRAFs help control the focus budget. Next, an analysis of the mask variability budget is done. We establish that a tight CD and placement control on the SRAFs is required for keeping PPE through focus under control. A variability budget of 0.5nm (1X) for both CD and PPE is shown to be just sufficient for maintaining a 40nm depth of focus (DoF) in the absence of process variability. PPE variability due to resist stochastics further reduces the available DoF.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roel Gronheid, Alex Vaglio Pret, and Anatoly Burov "Depth of focus in high-NA EUV lithography: the role of assist features and their variability budget", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940O (28 April 2023); https://doi.org/10.1117/12.2658394
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KEYWORDS
SRAF

Photomasks

Extreme ultraviolet lithography

Critical dimension metrology

Extreme ultraviolet

Manufacturing

Stochastic processes

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