Paper
31 January 2023 Hyperdoped Si thin films for infrared detection
Author Affiliations +
Proceedings Volume 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022; 124770C (2023) https://doi.org/10.1117/12.2648363
Event: International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, 2022, Boston, Massachusetts, United States
Abstract
Hyperdoped Si materials extend Si response range into near infrared by forming intermediate band in Si band gap. Ti hyperdoped Si (Si:Ti) has been demonstrated to have subbandgap photo response. In this work, we fabricated and characterized Si:Ti photodiodes and optimized the structure. At room temperature, the 3.5×10-3 EQE has been obtained at telecommunication wavelength 1550nm. And the detectable response extends until 2250nm. The results show the potential of Si:Ti materials being both Si:Ti photovoltaics and commercialized IR detection. To improve the efficiency of Si:Ti photodetectors, the affection of absorption rate, devices structure and the Si:Ti crystal quality is discussed.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jay Mathews "Hyperdoped Si thin films for infrared detection", Proc. SPIE 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022, 124770C (31 January 2023); https://doi.org/10.1117/12.2648363
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KEYWORDS
Mid-IR

Short wave infrared radiation

Silicon

Silicon films

Infrared detection

Near infrared

Photodetectors

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