Conventional mid-wave infrared (MWIR) band photodetectors based on HgCdTe material typically require external cooling to achieve sufficient sensing performance. The development of a scalable, low cost, low power, and room temperature operating MWIR detector technology capable of high spatial resolution IR imaging can greatly augment space and satellite sensing capabilities such as remote sensing and earth observation. By integrating bilayers of p + -doped graphene to function as a high mobility channel enhancing recombination of photogenerated carriers, a graphene-enhanced photodetector comprising HgCdTe absorbing material can provide higher performance uncooled detection over the 2-5 μm MWIR band. This high performance MWIR band detector technology consists of graphene bilayers on Si/SiO2 substrates doped with boron using a spin-on dopant (SOD) process, and subsequently transferred onto HgCdTe substrates. Boron doping levels and structural properties of the graphene bilayers were analyzed using Raman spectroscopy, Xray photoelectron spectroscopy (XPS), and secondary-ion mass spectroscopy (SIMS) throughout various stages of the development process including undoped, boron-doped, and following transfer onto HgCdTe/CdTe substrates. The developed room-temperature operating graphene-enhanced HgCdTe MWIR detectors have demonstrated through device modeling and optical and electrical characterization enhanced MWIR detection performance for NASA Earth Science, defense, and commercial applications.
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