Signal-to-noise ratio analysis of charge-coupled device imagers

Peter D. Burns

doi:10.1117/12.19454

1 July 1990 Signal-to-noise ratio analysis of charge-coupled device imagers

Peter D. Burns

Proceedings Volume 1242, Charge-Coupled Devices and Solid State Optical Sensors; (1990) https://doi.org/10.1117/12.19454
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States

Abstract

We start with a physical model1 of the detector and associated electronics. Using previously derived expressions for the MTF and noise power spectrum, we extend the use of the model to include a signal-to-noise metric, the noise equivalent quanta (NEQ). This approach is then applied in a design example relevant to film and document scanning.

Citation Download Citation

Peter D. Burns "Signal-to-noise ratio analysis of charge-coupled device imagers", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); https://doi.org/10.1117/12.19454

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