Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

B. King; S. Arslan; A. Boni; P. Della Casa; D. Martin; A. Thies; A. Knigge; P. Crump

doi:10.1117/12.2647096

14 March 2023 Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency

B. King, S. Arslan, A. Boni, P. Della Casa, D. Martin, A. Thies, A. Knigge, P. Crump

Author Affiliations +

Proceedings Volume 12403, High-Power Diode Laser Technology XXI; 124030J (2023) https://doi.org/10.1117/12.2647096
Event: SPIE LASE, 2023, San Francisco, California, United States

Abstract

Epi-down mounting can degrade performance in broad area lasers when the stress field extends into the active region. Thick p-side epitaxial layers have the potential to isolate the device from external stress, but add electrical resistance and losses from current spreading. Therefore, we use two-step epitaxy to combine highly-doped p-side epitaxial layers (2x thicker than conventional) with a resistive oxygen-implanted layer located close to the active region to block lateral current spreading. The resulting buried-regrown-implant-structure (BRIS) lasers with 100 μm stripes and lasing wavelength of 915 nm show high efficiency (peak of 67%, 55% at 20 W) and high lateral brightness (3.3 W/mm·mrad up to 17.5 W output power), improved over reference devices, in spite of the thick p-side.

Conference Presentation

Citation Download Citation

B. King, S. Arslan, A. Boni, P. Della Casa, D. Martin, A. Thies, A. Knigge, and P. Crump "Buried-regrown-implant-structure diode lasers with ultra-thick epitaxy for resistance to mounting stress without loss in efficiency", Proc. SPIE 12403, High-Power Diode Laser Technology XXI, 124030J (14 March 2023); https://doi.org/10.1117/12.2647096

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