Study of influence on semiconductor structure of HgCdTe detector induced by pulse laser

Xiaocheng Hou; Rui Wang; Shuai Qiao

doi:10.1117/12.2648738

14 October 2022 Study of influence on semiconductor structure of HgCdTe detector induced by pulse laser

Xiaocheng Hou, Rui Wang, Shuai Qiao

Proceedings Volume 12343, 2nd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2022); 123430X (2022) https://doi.org/10.1117/12.2648738
Event: 2nd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2022), 2022, Qingdao, China

Abstract

To study the effects of the semiconductor structure of the HgCdTe detector by high-energy pulsed light irradiation, building 2D models to simulate the changes of the internal temperature and the structure of the PN junction of the HgCdTe chip after being irradiated by a high-energy pulsed light with wavelength of 1064 nm. Simulation results show that after being irradiated by a high-energy pulsed light, the PN junction of the detector chip will disappear briefly, at the same time, a high temperature is generated on the illumination surface of the chip, and a temperature difference is formed inside the chip. After the laser irradiation, the temperature difference inside the chip changes the distribution of the carriers, creating a temperature difference electromotive force, offsets some of the built-in electric field in the PN junctions, deviating the HgCdTe detector from its normal operating state.

Citation Download Citation

Xiaocheng Hou, Rui Wang, and Shuai Qiao "Study of influence on semiconductor structure of HgCdTe detector induced by pulse laser", Proc. SPIE 12343, 2nd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2022), 123430X (14 October 2022); https://doi.org/10.1117/12.2648738

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