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19 October 2022 The logical performance comparison and research of new memristor models
Luanjing Li, Yukun Lian, Haoran Zong
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Proceedings Volume 12294, 7th International Symposium on Advances in Electrical, Electronics, and Computer Engineering; 122941O (2022) https://doi.org/10.1117/12.2641213
Event: 7th International Symposium on Advances in Electrical, Electronics and Computer Engineering (ISAEECE 2022), 2022, Xishuangbanna, China
Abstract
This paper presents the optimized memristor model based on the classical HP memristor model and the bipolar threshold behavior memristor model. This paper shows the mathematical modeling process of this optimized memristor model and the basic circuit principle of this optimized bipolar threshold behavior memristor model. The optimized bipolar threshold behavior memristor model is simulated by using OrCAD Pspice. We compared the optimized VTEAM memristor model with the classical HP memristor model in this paper and found the optimized bipolar threshold behavior memristor model has the superiority in switching characteristic and logical performance by the alternating voltage signal, which would be useful for new logical devices.
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Luanjing Li, Yukun Lian, and Haoran Zong "The logical performance comparison and research of new memristor models", Proc. SPIE 12294, 7th International Symposium on Advances in Electrical, Electronics, and Computer Engineering, 122941O (19 October 2022); https://doi.org/10.1117/12.2641213
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KEYWORDS
Resistance
Mathematical modeling
Instrument modeling
Performance modeling
Logic
Switching
Semiconductors
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