Presentation + Paper
30 September 2022 Triple barrier resonant tunneling diodes for THz emission and sensing
Author Affiliations +
Abstract
We present InP-based Triple Barrier Resonant Tunneling Diodes monolithically integrated with an on-wafer resonant or broad band antenna. Biasing these diodes in the negative differential resistance regime provides a fundamental mode oscillation of preliminary 90 μW at f0 = 260 GHz. At 280 GHz an estimated high zero-bias resonant responsivity of 50.000 V/W is modeled. A broad band average responsivity of 900 V·W-1 was determined in the frequency range from 230 … 330 GHz along with a minimum Noise Equivalent Power of 1 pW·Hz-0.5. This concept is expected to provide very high sensitivities at frequencies up to f ≥ 1 THz.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Prost, K. Arzi, S. Clochiatti, E. Mutlu, S. Suzuki, M. Asada, and Nils Weimann "Triple barrier resonant tunneling diodes for THz emission and sensing", Proc. SPIE 12230, Terahertz Emitters, Receivers, and Applications XIII, 122300D (30 September 2022); https://doi.org/10.1117/12.2632368
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KEYWORDS
Quantum wells

Data modeling

Resistance

Device simulation

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