Field-effect transistor based on ZnO:Li thin film with ferroelectric channel

A. R. Poghosyan; R. K. Hovsepyan; N. R. Aghamalyan; Y. A. Kafadaryan; H. L. Ayvazyan; H. G. Mnatsakanyan; S. I. Petrosyan

doi:10.1117/12.2632104

3 October 2022 Field-effect transistor based on ZnO:Li thin film with ferroelectric channel

A. R. Poghosyan, R. K. Hovsepyan, N. R. Aghamalyan, Y. A. Kafadaryan, H. L. Ayvazyan, H. G. Mnatsakanyan, S. I. Petrosyan

Author Affiliations +

Proceedings Volume 12229, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XVI; 122290A (2022) https://doi.org/10.1117/12.2632104
Event: SPIE Optical Engineering + Applications, 2022, San Diego, California, United States

Conference Poster

Abstract

We present an n-type channel transparent field-effect transistor (FET) using a top-gate configuration on a sapphire substrate. ZnO:Li film was used as channel, and MgF₂ film - as gate insulator. Measurements showed that ZnO:Li films are ferroelectrics with spontaneous polarization Ps = 1–5 mkC/sm² and coercive field EC = 5–10 kV/sm. The dependences of drain-source current on drain-source voltage at various gate-source voltages in two antiparallel Ps states were measured and the values of field-effect mobility and threshold voltage were determined for two Ps states: a) μ = 1.5 cm²/Vs, Uth = 30 V; b) μ = 1.7 cm²/Vs, U_th =23 V. Thus, Ps switching leads to a change in FET channel parameters. Results can be used to create a bistable or, more precisely, digital FET.

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A. R. Poghosyan, R. K. Hovsepyan, N. R. Aghamalyan, Y. A. Kafadaryan, H. L. Ayvazyan, H. G. Mnatsakanyan, and S. I. Petrosyan "Field-effect transistor based on ZnO:Li thin film with ferroelectric channel", Proc. SPIE 12229, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XVI, 122290A (3 October 2022); https://doi.org/10.1117/12.2632104

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